Method for Forming Fine Patterns of Semiconductor Device

ABSTRACT

A method for forming fine patterns of a semiconductor device employs a double patterning characteristic using a mask for forming a first pattern including a line pattern and a mask for separating the line pattern, and a reflow characteristic of a photoresist pattern.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a division of U.S. application Ser. No. 12/272,192 filed Nov.17, 2008, which claims the priority benefit of Korean patent applicationnumber 10-2008-0057870 filed Jun. 19, 2008, the entire respectivedisclosures of which are incorporated by reference.

BACKGROUND OF THE INVENTION

The disclosure relates to a method for forming fine patterns of asemiconductor device.

Due to the high degree of integration of semiconductor devices, theresolution required in semiconductor devices is smaller than the minimumresolution (1F) that can be resolved using photolithography equipment.

For example, when the minimum resolution that can be resolved by asingle exposure process using the photolithography equipment is 45 nm, asemiconductor device requires a resolution smaller than 40 nm. (“Singleexposure process” means an exposure process using one exposure mask.)

In order to overcome limits of the photolithography equipment, variouspatterning technologies have been developed and suggested.

Of these patterning technologies, double patterning technology dividespatterns having a small pitch into two masks and repeating photo andetching processes twice using the two masks to obtain a desired targetpattern.

FIG. 1 is a diagram illustrating an active region of a cell region 1000and a peri/core region 2000 of a DRAM.

Referring to FIG. 1, when it is impossible to form a pattern having asmall pitch as shown in A and a space between island patterns as shownin B, which is below a specific space, by a single exposure method usingone mask, a conventional double patterning method is performed to dividepatterns the target patterns) of FIG. 1 into two masks and to patternusing the two masks, thereby obtaining a target pattern.

The conventional double patterning method comprises repeating anexposing process twice using two masks, so that an actual pattern has adifferent size from that of the target pattern depending onmis-alignment of exposure equipment and process change.

SUMMARY OF THE INVENTION

Various embodiments of the disclosure are directed at providing a methodfor forming fine patterns of a semiconductor device. The fine patternmay have a smaller resolution than the minimum resolution (1F) ofphotolithography equipment.

According to an embodiment of the disclosure, a method for forming finepatterns of a semiconductor device comprises: forming a first patternhaving a line type that connects an active region of a cell region to anupper portion of an underlying layer in a longitudinal direction;forming a spacer insulating film over the resulting structure includingthe first pattern; forming a planarized gap-fill insulating film thatexposes the spacer insulating film; removing the spacer insulating filmusing the gap-fill insulating film as a mask to form a second patternbetween the first pattern; forming a first photoresist pattern thatdefines a contact hole for separating the first pattern and the secondpattern; reducing a critical dimension (CD) of the contact hole; andetching the first pattern and the second pattern using the firstphotoresist pattern as a mask, and etching the underlying layer usingthe first and second patterns as a mask.

Preferably, the first pattern is formed by: forming a hard mask layerover the underlying layer; forming a second photoresist pattern over thehard mask layer using a first exposure mask having a shading regionhaving the line type; and etching the hard mask layer using the secondphotoresist pattern as a mask to pattern the hard mask layer.

Preferably, the spacer insulating film comprises a material having ahigher etching selectivity than those of the hard mask layer and thegap-fill insulating film, and the gap-fill insulating film comprises amaterial having a lower etching selectivity than that of the hard masklayer.

Preferably, the gap-fill insulating film is planarized by an etch-backprocess or a chemical mechanical polishing process.

Preferably, the first photoresist pattern is formed by: forming aphotoresist film over the first pattern and the second pattern; andpatterning the photoresist film using a second exposure mask includingthe contact hole region as a transmitting region.

Preferably, the CD of the contact hole is reduced by a method selectedfrom the group consisting of reflowing the first photoresist pattern,forming a resolution enhancement lithography assisted by chemical shrink(RELACS) material in the first photoresist pattern, and forming a spacerof the first photoresist pattern.

Preferably, the first pattern is formed by: forming a first hard masklayer and a second hard mask layer over the underlying layer; forming asecond photoresist pattern over the second hard mask layer using thefirst exposure mask having a line type shading region; and etching thesecond hard mask layer using the second photoresist pattern as a mask topattern the second hard mask layer.

Preferably, the spacer insulating film comprises a material having ahigher etching selectivity than those of the first hard mask layer, thesecond hard mask layer, and the gap-fill insulating film, and thegap-fill insulating film comprises a material having a lower etchingselectivity than that of the first hard mask layer.

According to an embodiment of the disclosure, a method for forming finepatterns of a semiconductor device comprises: forming a first patternhaving a line type that connects an active region of a cell region overan underlying layer in a longitudinal direction; forming a spacerinsulating film over the resulting structure including the firstpattern; forming a planarized gap-fill insulating film that exposes thespacer insulating film; removing the spacer insulating film using thegap-fill insulating film as a mask to form a second pattern between thefirst pattern; forming a first photoresist pattern that defines acontact hole for separating the first pattern and the second pattern inthe cell region and defines an active region in a peripheral circuitregion; reducing a critical dimension (CD) between the first photoresistpattern; and etching the first pattern and the second pattern of thecell region, and the spacer insulating film and the gap-fill insulatingfilm of the peripheral circuit region using the first photoresistpattern as a mask, and etching the underlying layer using the firstpattern, the second pattern, the spacer insulating film, and thegap-fill insulating film as a mask.

Preferably, the first pattern is formed by: forming a hard mask layerover the underlying layer; forming a second photoresist pattern over thehard mask layer using a first exposure mask having a line-type shadingregion; and etching the hard mask layer using the second photoresistpattern as a mask to pattern the hard mask layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view illustrating a conventional fine pattern of asemiconductor device.

FIGS. 2 a and 2 b are plan views illustrating an exposure mask used infirst and third embodiments of the disclosure.

FIGS. 3 a to 3 i and FIGS. 4 a to 4 c are cross-sectional and plan viewsillustrating a method for forming a fine pattern of a semiconductordevice according to an embodiment of the disclosure.

FIGS. 5 a to 5 c are plan views illustrating an exposure mask used in asecond embodiment of the disclosure.

FIGS. 6 a to 6 j and FIGS. 7 a to 7 e are cross-sectional and plan viewsillustrating a method for forming a fine pattern of a semiconductordevice according to the second embodiment of the disclosure.

FIGS. 8 a to 8 i and FIGS. 9 a to 9 c are cross-sectional and plan viewsillustrating a method for forming a fine pattern of a semiconductordevice according to the third embodiment of the disclosure.

DETAILED DESCRIPTION OF SPECIFIC EMBODIMENT

The disclosure provides a method for forming patterns in a cell regionusing a spacer depositing and spacer removing and forming a patterns ina peripheral region (or core region) using a reflow characteristic, thatis, a resist shrink characteristic of a photoresist film using a doublepatterning process.

The disclosed method for forming a semiconductor device is described indetail below using reference to the accompanying drawings.

FIGS. 2 a and 2 b are plan views illustrating first and second exposuremasks used in first embodiments of the disclosure.

In a first exposure mask 100, a shading pattern 120 for forming a linepattern in a cell region 3000 is formed with a line type over a quartzsubstrate 110. The shading pattern 120 is formed to have the same sizeas a critical dimension (CD) of an active region in a longitudinaldirection of the active region. No patterns are formed in a peripheralcircuit region 4000.

In a second exposure mask 200, line patterns of a cell region 5000 areseparated to form an active region while a shading pattern 220 forshading an active region of a peripheral circuit region 600 is formedover a quartz substrate 210.

FIGS. 3 a to 3 i and FIGS. 4 a to 4 c are diagrams illustrating aprocess of patterning the active regions in a cell region 10000 and aperipheral circuit region (or core region) 20000 using the firstexposure mask 100 of FIG. 2 a and the second exposure mask 200 of FIG. 2b. The cross-sectional diagrams of FIGS. 3 a to 3 i are take along linex-x of the first and second exposure masks 100 and 200.

Referring to FIGS. 3 a and 3 b, a first hard mask layer 13 and a secondhard mask layer 15 are sequentially formed over a semiconductorsubstrate 11 including an underlying layer (not shown). The first hardmask layer 13 comprises an insulating material having a lower etchingselectivity than that of the second hard mask layer 15.

A photoresist pattern 17 is formed over the second hard mask layer 15.

Specifically, a photoresist film is coated over the second hard masklayer 15, exposed and developed using the first exposure mask 100 ofFIG. 2 a, thereby obtaining the photoresist pattern 17. The photoresistpattern 17 is formed only in the cell region 10000 with a line typealong a longitudinal direction of the active region.

The second hard mask layer 15 is etched until the first hard mask layer13 is exposed using the photoresist pattern 17 as a mask, therebyobtaining a second hard mask layer 15 pattern. Generally, thephotoresist pattern 17 is completely removed by the etching process.However, when the photoresist pattern 17 remains, the remainingphotoresist pattern 17 is removed.

Referring to FIG. 3 c, a spacer insulating film 19 is formed over thesecond hard mask layer 15 pattern and the first hard mask layer 13. Thespacer insulating film 19 is formed both in the cell region 10000 and inthe peripheral circuit region 20000.

The spacer insulating film 19 comprises an insulating material having ahigher etching selectivity than those of the first hard mask layer 13,the second hard mask layer 15 pattern, and a gap-fill insulating film 21(see FIG. 3 d).

Referring to FIG. 3 d, a gap-fill insulating film 21 is formed over thespacer insulating film 19. The gap-fill insulating film 21 is planarizeduntil the spacer insulating film 19 located over the second hard masklayer 15 pattern is exposed, thereby obtaining a gap-fill insulatingpattern.

The gap-fill insulating film 21 comprises a material having a loweretching selectivity than that of the first hard mask layer 13. Thegap-fill insulating film 21 has the same or similar etching selectivityto that of the second hard mask layer 15 pattern.

The gap-fill insulating film 21 that fills a space between the spacerinsulating films 19 is positioned between the second hard mask layer 15patterns.

The gap-fill insulating film 21 is planarized by an etch-back process ora chemical mechanical polishing process.

Referring to FIG. 3 e, the spacer insulating film 19 is etched using thegap-fill insulating film 21 pattern as an etching mask and using thefirst hard mask layer 13 and the second hard mask layer 15 pattern as anetching barrier.

The gap-fill insulating film 21 pattern remains between the second hardmask layer 15 patterns using a stacked structure over the un-etchedspacer insulating film 19.

Referring to FIG. 3 f, a photoresist pattern 23 is formed. Specifically,a photoresist film is coated over the resulting structure of FIG. 3 e,and an exposing and developing process is performed using the secondexposure mask 200 of FIG. 2 c, thereby obtaining the photoresist pattern23. In the second exposure mask 200, a shading pattern 220 for forming acontact hole in the cell region 10000 and forming an active region inthe peripheral circuit region 20000 is forming over the quartz substrate210.

The photoresist pattern 23 partially exposes the second hard mask layer15 pattern or the gap-fill insulating film 21 pattern in the cell region10000, and is formed using an island type over the active region to havethe minimum interval (F) in the peripheral circuit region 20000.

Referring to FIGS. 3 g and 4 a, the photoresist pattern 23 is reflowedto form a reflowed photoresist pattern 25. In the reflowed photoresistpattern 25, the contact hole is formed to have a decreased size in thecell region 10000, and the photoresist pattern 23 is formed to have anincreased size in the peripheral circuit region 20000, so that aninterval between the photoresist patterns 23 becomes smaller than theminimum interval (F).

The process of reflowing the photoresist pattern 25 may be replacedusing a process of forming a RELACS (resolution enhancement lithographyassisted by chemical shrink) material over the photoresist pattern 25 orof forming a spacer at sidewalls of the photoresist pattern 23. Thereflowed photoresist pattern 25 is formed so that an interval betweenthe patterns can be smaller than the minimum interval usingphotolithography equipment.

Referring to FIGS. 3 h and 4 b, the gap-fill insulating film 21 pattern,the second hard mask layer 15 pattern, and the spacer insulating film 19are etched using the photoresist pattern 23 and the reflowed photoresistpattern 25 as a mask. As a result, a stacked structure including thespacer insulating film 19 and the gap-fill insulating film 21, and thesecond hard mask layer 15 pattern are formed over the active region ofthe cell region 10000 and the peripheral circuit region 20000, as shownin FIG. 4 b.

When the reflowed photoresist pattern 25 remains, an additional removingprocess is performed to remove the residual photoresist pattern 25.

Referring to FIGS. 3 i and 4 c, the first hard mask layer 13 is etchedusing the stacked structure including the spacer insulating film 19 andthe gap-fill insulating film 21, and the second hard mask pattern as amask, thereby obtaining a first hard mask layer 13 pattern. The stackedstructure including the spacer insulating film 19 and the gap fillinsulating film 21, and the second hard mask pattern are removed.

As a subsequent process, the underlying layer (not shown) is etchedusing the first hard mask layer 13 pattern as a mask, thereby obtaininga fine underlying pattern.

FIGS. 5 a to 5 c are plan views illustrating first to third exposuremasks used in a second embodiment of the disclosure.

In a first exposure mask 300, a shading pattern 320 for forming a linepattern in a cell region 7000 is formed with a line type over a quartzsubstrate 310. The shading pattern 320 is formed to have the same sizeas a CD of an active region in a longitudinal direction. No patterns areformed in a peripheral circuit region 8000.

In a second exposure mask 400, a shading pattern 420 for shading thecell region 700 and the active region of the peripheral circuit region8000 is formed over a quartz substrate 410. No patterns are formed inthe cell region 700.

In a third exposure mask 500, a shading pattern 520 for separating theline pattern of the cell region 7000 and shading the peripheral circuitregion 8000 is formed over a quartz substrate 510.

FIGS. 6 a to 6 j and FIGS. 7 a to 7 e are cross-sectional and plan viewsillustrating a process of patterning the active region in a cell region30000 and a peripheral circuit region (or core region) 40000 using thefirst to third exposure masks 300, 400 and 500. FIGS. 6 a to 6 j arediagrams taken along line y-y of the first to third exposure masks 300,400 and 500. FIGS. 7 a to 7 e show plan views of FIGS. 6 e to 6 g, and 6i to 6 j.

Referring to FIGS. 6 a and 6 b, a first hard mask layer 43 and a secondhard mask layer 45 are sequentially formed over a semiconductorsubstrate 41 including an underlying layer (not shown). The first hardmask layer 43 comprises an insulating material having a lower etchingselectivity than that of the second hard mask layer 45 and a spacerinsulating film 49 of FIG. 6 c.

A photoresist pattern 47 is formed over the second hard mask layer 45.Specifically, a photoresist film is coated over the second hard masklayer 45, exposed and developed using the first exposure mask 300 ofFIG. 5 a, thereby obtaining the photoresist pattern 47. The photoresistpattern 47 is formed only in the cell region 30000 with a line typealong a longitudinal direction of the active region.

The second hard mask layer 45 is etched until the first hard mask layer43 is exposed using the photoresist pattern 47 as a mask, therebyobtaining a second hard mask layer 45 pattern. Generally, thephotoresist pattern 17 is completely removed by the etching process.However, when the photoresist pattern 17 remains, the remainingphotoresist pattern 17 is removed.

Referring to FIG. 6 c, a spacer insulating film 49 is formed over thesecond hard mask layer 45 pattern and the first hard mask layer 43. Thespacer insulating film 49 is formed both in the cell region 30000 and inthe peripheral circuit region 40000.

The spacer insulating film 49 comprises an insulating material having ahigher etching selectivity than that of the first hard mask layer 43 andthe second hard mask layer 45 pattern.

Referring to FIG. 6 d, a second photoresist film is coated over thespacer insulating film 49, exposed and developed using the secondexposure mask 400 of FIG. 5 b, thereby obtaining a photoresist pattern51. The photoresist pattern 51 is formed only in the peripheral circuitregion 40000.

Referring to FIGS. 6 e and 7 a, the photoresist pattern 51 is reflowedto form a reflowed photoresist pattern 53 at sidewalls of thephotoresist pattern 51. The reflowed photoresist pattern 53 increasesthe size of the photoresist pattern 51 of the peripheral circuit region40000, so that an interval between the photoresist pattern 51 becomessmaller than the minimum interval (F).

The process of reflowing the photoresist pattern 53 may be replacedusing a process of forming a RELACS material over the photoresistpattern 53 or of forming a spacer at sidewalls of the photoresistpattern 51. The reflowed photoresist pattern 53 is formed so that aninterval between the patterns can be smaller than the minimum interval.

Referring to FIGS. 6 f and 7 b, the spacer insulating film 49 isisotropic-etched using the photoresist pattern 51 and the reflowedphotoresist pattern 53 as a mask and using the second hard mask layer 45pattern and the first hard mask layer 43 as an etching barrier. As aresult, a spacer 49A is formed at sidewalls of the second hard maskpattern, and a spacer insulating film pattern 49B is formed in theperipheral circuit unit 40000.

Referring to FIGS. 6 g and 7 c, the second hard mask pattern is removed.

Referring to FIG. 6 h, a photoresist film is coated over the resultingstructure of FIG. 6 f, exposed and developed using the third exposuremask 500 of FIG. 5 c, thereby obtaining a photoresist film 55.

The third exposure mask 500 exposes the spacer 49A formed in a regionexcept the active region so that the spacer 49A remains only over theactive region.

Referring to FIGS. 6 i and 7 d, after the exposed spacer 49A exposedusing the photoresist pattern 55 as a mask is removed, the photoresistpattern 55 is removed. As a result, the spacer 49A is formed only overthe active region of the cell region 30000, and the spacer insulatingpattern 49B is formed over the active region of the peripheral circuitregion 40000.

Referring to FIGS. 6 j and 7 e, the first hard mask layer 43 is etchedusing the spacer 49A and the spacer insulating pattern 49B as a mask.The spacer 49A and the spacer insulating pattern 49B are removed to forma first hard mask layer pattern 43.

The underlying layer (not shown) is etched using the first hard masklayer pattern 43 as a mask to obtain a fine underlying pattern.

FIGS. 8 a to 8 i and FIGS. 9 a to 9 c are diagrams illustrating aprocess of forming active regions in a cell region 50000 and aperipheral circuit region (or core region) 60000 using the firstexposure mask 100 of FIG. 2 a and the exposure mask 200 of FIG. 2 b.FIGS. 8 a to 8 i show cross-sectional views taken along line x-x of thefirst and second exposure masks 100 and 200.

Referring to FIGS. 8 a and 8 b, a first hard mask layer 63 and a secondhard mask layer 65 are sequentially formed over a semiconductorsubstrate 61 including an underlying layer (not shown). The first hardmask layer 63 comprises an insulating material having a lower etchingselectivity than that of the second hard mask layer 65.

A photoresist pattern 67 is formed over the second hard mask layer 65.

Specifically, a photoresist film is coated over the second hard masklayer 65, exposed and developed using the first exposure mask 100 ofFIG. 2 a, thereby obtaining the photoresist pattern 67. The photoresistpattern 67 is formed to have a line type along a longitudinal directionof the active region.

The second hard mask layer 65 is etched using the photoresist pattern 67as a mask until the first hard mask layer 63 is exposed, therebyobtaining a second hard mask layer 65 pattern. Generally, thephotoresist pattern 67 is completely removed by the etching process.However, when the photoresist pattern 67 remains, the remainingphotoresist pattern 67 is removed.

Referring to FIG. 8 c, a spacer insulating film 69 is formed over thesecond hard mask layer 65 pattern and the first hard mask layer 63. Thespacer insulating film 69 is formed both in the cell region 50000 andthe peripheral circuit region 60000.

The spacer insulating film 69 comprises an insulating material having ahigher etching selectivity than that of the first hard mask layer 63,the second hard mask layer 65 pattern and a gap-fill insulating film 71of FIG. 8 d.

Referring to FIG. 8 d, the gap-fill insulating film 71 is formed overthe spacer insulating film 69. The gap-fill insulating film 71 and thespacer insulating film 69 are planarized until the second hard maskpattern is exposed, thereby obtaining a gap-fill insulating film 71pattern. The gap-fill insulating film 71 comprises a material having alower etching selectivity than that of the first hard mask layer 63. Thegap-fill insulating film 71 has the same or similar etching selectivityto that of the second hard mask pattern.

The gap-fill insulating film 71 that fills a space between the spacerinsulating films 69 is positioned between the second hard mask layer 65patterns.

The spacer insulating film 69 is planarized by an etch-back process or achemical mechanical polishing process.

Referring to FIG. 8 e, the spacer insulating film 69 is etched using thegap-fill insulating film 71 pattern as a mask and using the first hardmask layer 63 and the second hard mask layer 65 pattern as an etchingbarrier.

The gap-fill insulating pattern remains between the second hard masklayer 65 patterns using a stacked type over the un-etched spacerinsulating film 69.

Referring to FIG. 8 f, a photoresist pattern 73 is formed. Specifically,a photoresist film is coated over the resulting structure of FIG. 8 e,exposed and developed using the second exposure mask 200 of FIG. 2 b,thereby obtaining the photoresist pattern 73. In the second exposuremask 200, a shading pattern 220 for forming a contact hole in the cellregion 50000 and forming an active region in the peripheral circuitregion 60000 is formed over a quartz substrate 210.

The photoresist pattern 73 partially exposes the second hard maskpattern or the gap-fill insulating pattern in the cell region 50000, andis formed over the active region using an island type formed using theminimum interval in the peripheral circuit region 60000.

Referring to FIGS. 8 g and 9 a, the photoresist pattern 73 is reflowedto obtain a reflowed photoresist pattern 75. In the reflowed photoresistpattern 75, the contact hole is formed to have a decreased size in thecell region 50000, and the photoresist pattern 73 is formed to have anincreased size in the peripheral circuit region 60000, so that aninterval between the photoresist patterns 73 becomes smaller than theminimum interval (F).

The process of reflowing the photoresist pattern 75 may be replacedusing a process of forming a RELACS material over the photoresistpattern 75 or of forming a spacer at sidewalls of the photoresistpattern 73. The reflowed photoresist pattern 75 is formed so that aninterval between the patterns can be smaller than the minimum intervalusing photolithography equipment.

Referring to FIGS. 8 h and 9 b, the gap-fill insulating film 71 pattern,the second hard mask layer 65 pattern and the spacer insulating film 69are etched using the photoresist pattern 73 and the reflowed photoresistpattern 75 as a mask, thereby obtaining a stacked structure includingthe spacer insulating film 69 and the gap-fill insulating film 71, andthe second hard mask layer 65 pattern over the active regions of thecell region 50000 and the peripheral circuit region 60000.

When the photoresist pattern 73 or the reflowed photoresist pattern 75remains, an additional removal process is performed.

Referring to FIGS. 8 i and 9 c, the first hard mask layer 63 is etchedusing the stacked structure including the spacer insulating film 69 andthe gap-fill insulating film 71, and the second hard mask layer 65pattern as a mask, thereby obtaining a first hard mask layer 63 pattern.The stacked structure including the spacer insulating film 69 and thegap-fill insulating film 71, and the second hard mask pattern areremoved.

The underlying layer (not shown) is etched using the first hard maskpattern as a mask, thereby obtaining a fine underlying pattern.

As described above, the disclosed method for forming fine patterns of asemiconductor device employs a double patterning process for formingsmall pitch patterns simultaneously in the cell region, the peripheralcircuit region and the core region, thereby preventing mis-alignedexposures.

The above embodiments of the disclosure are illustrative and notlimitative. Various alternatives and equivalents are possible. Theinvention is not limited by the type of deposition, etching polishing,and patterning steps described herein, nor is the invention limited toany specific type of semiconductor device. For example, the disclosuremay be implemented in a dynamic random access memory (DRAM) device ornonvolatile memory device. Other additions, subtractions, ormodifications are obvious in view of the present disclosure and areintended to fall within the scope of the appended claims.

What is claimed is:
 1. A method for forming fine patterns of asemiconductor device, the method comprising: forming a first patternhaving a line type that connects an active region of a cell region in alongitudinal direction over an underlying layer; forming a spacerinsulating film over the resulting structure including the firstpattern; forming a planarized gap-fill insulating film that exposes thespacer insulating film; removing the spacer insulating film using thegap-fill insulating film as a mask to form a second pattern between thefirst pattern; forming a first photoresist pattern that defines acontact hole for separating the first pattern and the second pattern;reducing a critical dimension (CD) of the contact hole; etching thefirst pattern and the second pattern using the first photoresist patternas a mask; and, etching the underlying layer using the etched first andsecond patterns as a mask.
 2. The method according to claim 1,comprising forming the first pattern by: forming a hard mask layer overthe underlying layer; forming a second photoresist pattern over the hardmask layer using a first exposure mask having a shading region havingthe line type; and etching the hard mask layer using the secondphotoresist pattern as a mask to pattern the hard mask layer.
 3. Themethod according to claim 2, wherein the spacer insulating filmcomprises a material having a higher etching selectivity than those ofthe hard mask layer and the gap-fill insulating film.
 4. The methodaccording to claim 2, wherein the gap-fill insulating film comprises amaterial having a lower etching selectivity than that of the hard masklayer.
 5. The method according to claim 1, comprising planarizing thegap-fill insulating film by an etch-back process or a chemicalmechanical polishing process.
 6. The method according to claim 1,comprising forming the first photoresist pattern by: forming aphotoresist film over the result structure including the first patternand the second pattern; and patterning the photoresist film using asecond exposure mask having a transmitting region that defines thecontact hole.
 7. The method according to claim 1, comprising reducingthe CD of the contact hole by a method selected from the groupconsisting of reflowing the first photoresist pattern, forming aresolution enhancement lithography assisted by chemical shrink (RELACS)material in the first photoresist pattern, and forming a spacer of thefirst photoresist pattern.
 8. The method according to claim 1,comprising forming the first pattern by: forming a first hard mask layerand a second hard mask layer over the underlying layer; forming a secondphotoresist pattern over the second hard mask layer using the firstexposure mask having a line type shading region; and etching the secondhard mask layer using the second photoresist pattern as a mask topattern the second hard mask layer.
 9. The method according to claim 8,wherein the spacer insulating film comprises a material having a higheretching selectivity than those of the first hard mask layer, the secondhard mask layer, and the gap-fill insulating film.
 10. The methodaccording to claim 8, wherein the gap-fill insulating film comprises amaterial having a lower etching selectivity than that of the first hardmask layer.